Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; L. C. Chen; C. W. Hsu; H. M. Lin; C. C. Chen

doi:10.1063/1.1536250

Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires

S. Dhara^*
, A. Datta
, C. T. Wu
, Z. H. Lan
, K. H. Chen
, Y. L. Wang
, L. C. Chen
, C. W. Hsu
, H. M. Lin
, C. C. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

A study of Ga⁺ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

Original language	English
Pages (from-to)	451-453
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	3
DOIs	https://doi.org/10.1063/1.1536250
Publication status	Published - 2003 Jan 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1536250

Cite this

@article{bad01aed26e04c5a985e95b3f4ddc58d,

title = "Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires",

abstract = "A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.",

author = "S. Dhara and A. Datta and Wu, \{C. T.\} and Lan, \{Z. H.\} and Chen, \{K. H.\} and Wang, \{Y. L.\} and Chen, \{L. C.\} and Hsu, \{C. W.\} and Lin, \{H. M.\} and Chen, \{C. C.\}",

year = "2003",

month = jan,

day = "20",

doi = "10.1063/1.1536250",

language = "English",

volume = "82",

pages = "451--453",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "3",

}

TY - JOUR

T1 - Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

AU - Dhara, S.

AU - Datta, A.

AU - Wu, C. T.

AU - Lan, Z. H.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chen, L. C.

AU - Hsu, C. W.

AU - Lin, H. M.

AU - Chen, C. C.

PY - 2003/1/20

Y1 - 2003/1/20

N2 - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

AB - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

UR - https://www.scopus.com/pages/publications/0037455247

UR - https://www.scopus.com/pages/publications/0037455247#tab=citedBy

U2 - 10.1063/1.1536250

DO - 10.1063/1.1536250

M3 - Article

AN - SCOPUS:0037455247

SN - 0003-6951

VL - 82

SP - 451

EP - 453

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this