Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara*, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

Original languageEnglish
Pages (from-to)451-453
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2003 Jan 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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