Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; L. C. Chen; C. W. Hsu; H. M. Lin; C. C. Chen

doi:10.1063/1.1536250

Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires

S. Dhara^*, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

A study of Ga⁺ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

Original language	English
Pages (from-to)	451-453
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	3
DOIs	https://doi.org/10.1063/1.1536250
Publication status	Published - 2003 Jan 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1536250

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abstract = "A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.",

author = "S. Dhara and A. Datta and Wu, {C. T.} and Lan, {Z. H.} and Chen, {K. H.} and Wang, {Y. L.} and Chen, {L. C.} and Hsu, {C. W.} and Lin, {H. M.} and Chen, {C. C.}",

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AU - Dhara, S.

AU - Datta, A.

AU - Wu, C. T.

AU - Lan, Z. H.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chen, L. C.

AU - Hsu, C. W.

AU - Lin, H. M.

AU - Chen, C. C.

PY - 2003/1/20

Y1 - 2003/1/20

N2 - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

AB - A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Enhanced dynamic annealing in Ga⁺ ion-implanted GaN nanowires

Abstract

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