Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

Original languageEnglish
Pages (from-to)451-453
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number3
DOIs
Publication statusPublished - 2003 Jan 20

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fluence
nanowires
annealing
defects
agglomeration
point defects
ion implantation
ions
disorders
vapors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., ... Chen, C. C. (2003). Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. Applied Physics Letters, 82(3), 451-453. https://doi.org/10.1063/1.1536250

Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. / Dhara, S.; Datta, A.; Wu, C. T.; Lan, Z. H.; Chen, K. H.; Wang, Y. L.; Chen, L. C.; Hsu, C. W.; Lin, H. M.; Chen, C. C.

In: Applied Physics Letters, Vol. 82, No. 3, 20.01.2003, p. 451-453.

Research output: Contribution to journalArticle

Dhara, S, Datta, A, Wu, CT, Lan, ZH, Chen, KH, Wang, YL, Chen, LC, Hsu, CW, Lin, HM & Chen, CC 2003, 'Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires', Applied Physics Letters, vol. 82, no. 3, pp. 451-453. https://doi.org/10.1063/1.1536250
Dhara S, Datta A, Wu CT, Lan ZH, Chen KH, Wang YL et al. Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. Applied Physics Letters. 2003 Jan 20;82(3):451-453. https://doi.org/10.1063/1.1536250
Dhara, S. ; Datta, A. ; Wu, C. T. ; Lan, Z. H. ; Chen, K. H. ; Wang, Y. L. ; Chen, L. C. ; Hsu, C. W. ; Lin, H. M. ; Chen, C. C. / Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. In: Applied Physics Letters. 2003 ; Vol. 82, No. 3. pp. 451-453.
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