Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, C. C. Chen

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Abstract

A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.

Original languageEnglish
Pages (from-to)451-453
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number3
DOIs
Publication statusPublished - 2003 Jan 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., Chen, L. C., Hsu, C. W., Lin, H. M., & Chen, C. C. (2003). Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires. Applied Physics Letters, 82(3), 451-453. https://doi.org/10.1063/1.1536250