Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee; Min Hung Lee; Chun Mao Cheng; Chia Hao Yang

doi:10.1063/1.3605244

Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee^*, Min Hung Lee, Chun Mao Cheng, Chia Hao Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×10⁹ to 3.62 ×10⁸ cm ^-2, leading to an increase in short-circuit current density (J _SC = 1.09 mA·cm^-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (V_OC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

Original language	English
Article number	263504
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3605244
Publication status	Published - 2011 Jun 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate",

abstract = "This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.",

author = "Lee, {Ya Ju} and Lee, {Min Hung} and Cheng, {Chun Mao} and Yang, {Chia Hao}",

note = "Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Republic of China (ROC) in Taiwan under contract Nos. NSC–98–2112–M–003–001–MY2, NSC 98-2221-E-003-020-MY3, and NSC–98–3114–E–002–003–CC2 and technical support by Professor C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University.",

year = "2011",

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doi = "10.1063/1.3605244",

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volume = "98",

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AU - Lee, Ya Ju

AU - Lee, Min Hung

AU - Cheng, Chun Mao

AU - Yang, Chia Hao

N1 - Funding Information: The authors gratefully acknowledge financial support from the National Science Council of Republic of China (ROC) in Taiwan under contract Nos. NSC–98–2112–M–003–001–MY2, NSC 98-2221-E-003-020-MY3, and NSC–98–3114–E–002–003–CC2 and technical support by Professor C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University.

PY - 2011/6/27

Y1 - 2011/6/27

N2 - This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

AB - This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

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Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

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