Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate

Ya Ju Lee, Min Hung Lee, Chun Mao Cheng, Chia Hao Yang

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Abstract

This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS). Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28 ×109 to 3.62 ×108 cm -2, leading to an increase in short-circuit current density (J SC = 1.09 mA·cm-2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC = 2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

Original languageEnglish
Article number263504
JournalApplied Physics Letters
Volume98
Issue number26
DOIs
Publication statusPublished - 2011 Jun 27

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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