Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Tzu Neng Lin; Svette Reina Merden S. Santiago; Jie An Zheng; Yu Chiang Chao; Chi Tsu Yuan; Ji Lin Shen; Chih Hung Wu; Cheng An J. Lin; Wei Ren Liu; Ming Chiang Cheng; Wu Ching Chou

doi:10.1038/srep39163

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

Tzu Neng Lin, Svette Reina Merden S. Santiago, Jie An Zheng, Yu Chiang Chao, Chi Tsu Yuan, Ji Lin Shen, Chih Hung Wu, Cheng An J. Lin, Wei Ren Liu, Ming Chiang Cheng, Wu Ching Chou

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

Original language	English
Article number	39163
Journal	Scientific reports
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/srep39163
Publication status	Published - 2016 Dec 23
Externally published	Yes

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title = "Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots",

abstract = "Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.",

author = "Lin, {Tzu Neng} and Santiago, {Svette Reina Merden S.} and Zheng, {Jie An} and Chao, {Yu Chiang} and Yuan, {Chi Tsu} and Shen, {Ji Lin} and Wu, {Chih Hung} and Lin, {Cheng An J.} and Liu, {Wei Ren} and Cheng, {Ming Chiang} and Chou, {Wu Ching}",

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year = "2016",

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day = "23",

doi = "10.1038/srep39163",

language = "English",

volume = "6",

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AU - Lin, Tzu Neng

AU - Santiago, Svette Reina Merden S.

AU - Zheng, Jie An

AU - Chao, Yu Chiang

AU - Yuan, Chi Tsu

AU - Shen, Ji Lin

AU - Wu, Chih Hung

AU - Lin, Cheng An J.

AU - Liu, Wei Ren

AU - Cheng, Ming Chiang

AU - Chou, Wu Ching

PY - 2016/12/23

Y1 - 2016/12/23

N2 - Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

AB - Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell.

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Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

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