Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Chia Chi Fan; Chun Hu Cheng; Yi Ru Chen; Chien Liu; Chun Yen Chang

doi:10.1109/IEDM.2017.8268444

Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Chia Chi Fan
, Chun Hu Cheng
, Yi Ru Chen
, Chien Liu
, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

38 Citations (Scopus)

Abstract

We experimentally demonstrated that ferroelectric HfAlO_x negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of I_DS to reach an ultralow I_off of 4 fA/μm, and a very high I_on/I_off ratio of >10⁸. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% I_on enhancement and 27% V_T reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.

Original language	English
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23.2.1-23.2.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268444
Publication status	Published - 2018 Jan 23
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2017 Dec 2 → 2017 Dec 6

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	2017/12/02 → 2017/12/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2017.8268444

Cite this

Fan, C. C., Cheng, C. H., Chen, Y. R., Liu, C., & Chang, C. Y. (2018). Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 23.2.1-23.2.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268444

Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. / Fan, Chia Chi; Cheng, Chun Hu; Chen, Yi Ru et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Cheng, CH, Chen, YR, Liu, C & Chang, CY 2018, Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 23.2.1-23.2.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 2017/12/02. https://doi.org/10.1109/IEDM.2017.8268444

Fan CC, Cheng CH, Chen YR, Liu C, Chang CY. Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. In 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 23.2.1-23.2.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2017.8268444

Fan, Chia Chi ; Cheng, Chun Hu ; Chen, Yi Ru et al. / Energy-efficient HfAlO_x NCFET : Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{e8f754f38b7f4651be60b7d8e9ba0baf,

title = "Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage",

abstract = "We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66\% Ion enhancement and 27\% VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.",

author = "Fan, \{Chia Chi\} and Cheng, \{Chun Hu\} and Chen, \{Yi Ru\} and Chien Liu and Chang, \{Chun Yen\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

year = "2018",

month = jan,

day = "23",

doi = "10.1109/IEDM.2017.8268444",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "23.2.1--23.2.4",

booktitle = "2017 IEEE International Electron Devices Meeting, IEDM 2017",

}

TY - GEN

T1 - Energy-efficient HfAlOx NCFET

T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017

AU - Fan, Chia Chi

AU - Cheng, Chun Hu

AU - Chen, Yi Ru

AU - Liu, Chien

AU - Chang, Chun Yen

PY - 2018/1/23

Y1 - 2018/1/23

N2 - We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% Ion enhancement and 27% VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.

AB - We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% Ion enhancement and 27% VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.

UR - https://www.scopus.com/pages/publications/85045201217

UR - https://www.scopus.com/pages/publications/85045201217#tab=citedBy

U2 - 10.1109/IEDM.2017.8268444

DO - 10.1109/IEDM.2017.8268444

M3 - Conference contribution

AN - SCOPUS:85045201217

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 23.2.1-23.2.4

BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 2 December 2017 through 6 December 2017

ER -