Energy-efficient HfAlOx NCFET

Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Chia Chi Fan, Chun-Hu Cheng, Yi Ru Chen, Chien Liu, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% Ion enhancement and 27% VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23.2.1-23.2.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 2018 Jan 23
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2017 Dec 22017 Dec 6

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period17/12/217/12/6

Fingerprint

Passivation
passivity
Hysteresis
leakage
Capacitance
switches
hysteresis
Switches
Defects
Fluorine
defects
Depolarization
Surface potential
Oxygen vacancies
Field effect transistors
capacitance
Ferroelectric materials
Amplification
Ions
depolarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Fan, C. C., Cheng, C-H., Chen, Y. R., Liu, C., & Chang, C. Y. (2018). Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 23.2.1-23.2.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268444

Energy-efficient HfAlOx NCFET : Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. / Fan, Chia Chi; Cheng, Chun-Hu; Chen, Yi Ru; Liu, Chien; Chang, Chun Yen.

2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, CC, Cheng, C-H, Chen, YR, Liu, C & Chang, CY 2018, Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 23.2.1-23.2.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 17/12/2. https://doi.org/10.1109/IEDM.2017.8268444
Fan CC, Cheng C-H, Chen YR, Liu C, Chang CY. Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. In 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 23.2.1-23.2.4. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2017.8268444
Fan, Chia Chi ; Cheng, Chun-Hu ; Chen, Yi Ru ; Liu, Chien ; Chang, Chun Yen. / Energy-efficient HfAlOx NCFET : Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage. 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of <25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of IDS to reach an ultralow Ioff of 4 fA/μm, and a very high Ion/Ioff ratio of >108. Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66{\%} Ion enhancement and 27{\%} VT reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation.",
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