Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

T. S. Lay; M. Hong; J. Kwo; J. P. Mannaerts; W. H. Hung; D. J. Huang

doi:10.1016/S0038-1101(01)00175-7

Energy-band parameters at the GaAs- and GaN-Ga₂O₃(Gd₂O₃) interfaces

T. S. Lay^*, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

The valence-band offset (ΔE_v ) has been determined to be ∼2.6 eV at the Ga₂O₃(Gd₂O₃)-GaAs interface, and ∼1.1 eV at the Ga₂O₃(Gd₂O₃)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga₂O₃(Gd₂O₃)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔE_C) of ∼1.4 eV at the Ga₂O₃(Gd₂O₃)-GaAs interface and an electron effective mass m* ∼ 0.29m_e of the Ga₂O₃(Gd₂O₃) layer. Consequently, the energy-band gap of Ga₂O₃(Gd₂O₃) is ∼5.4 eV, while ΔE_c for the Ga₂O₃(Gd₂O₃)-GaN interface is ∼0.9 eV.

Original language	English
Pages (from-to)	1679-1682
Number of pages	4
Journal	Solid-State Electronics
Volume	45
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(01)00175-7
Publication status	Published - 2001 Sept
Externally published	Yes

Keywords

Energy-band offset
GaO(GdO)
GaAs
GaN

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(01)00175-7

Cite this

@article{5cfc7710198849d1bbde0f351142621b,

title = "Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces",

abstract = "The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.",

keywords = "Energy-band offset, GaO(GdO), GaAs, GaN",

author = "Lay, {T. S.} and M. Hong and J. Kwo and Mannaerts, {J. P.} and Hung, {W. H.} and Huang, {D. J.}",

note = "Funding Information: TSL would like to thank the supports from National Science Council, Taiwan through funding grants NSC89-2218-E-110-023, and Synchrotron Radiation Research Center, Taiwan.",

year = "2001",

month = sep,

doi = "10.1016/S0038-1101(01)00175-7",

language = "English",

volume = "45",

pages = "1679--1682",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9",

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TY - JOUR

T1 - Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

AU - Lay, T. S.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Hung, W. H.

AU - Huang, D. J.

N1 - Funding Information: TSL would like to thank the supports from National Science Council, Taiwan through funding grants NSC89-2218-E-110-023, and Synchrotron Radiation Research Center, Taiwan.

PY - 2001/9

Y1 - 2001/9

N2 - The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

AB - The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

KW - Energy-band offset

KW - GaO(GdO)

KW - GaAs

KW - GaN

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