Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

T. S. Lay*, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)


The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

Original languageEnglish
Pages (from-to)1679-1682
Number of pages4
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2001 Sept
Externally publishedYes


  • Energy-band offset
  • GaAs
  • GaN
  • GaO(GdO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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