Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

Research output: Contribution to journalArticle

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Abstract

The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

Original languageEnglish
Pages (from-to)1679-1682
Number of pages4
JournalSolid-State Electronics
Volume45
Issue number9
DOIs
Publication statusPublished - 2001 Sep 1

Fingerprint

Current voltage characteristics
Valence bands
Synchrotron radiation
Conduction bands
Field emission
Band structure
energy bands
Diodes
Energy gap
X ray photoelectron spectroscopy
Electrons
Electric potential
electric potential
conduction bands
synchrotron radiation
diodes
photoelectron spectroscopy
valence
gallium arsenide
high resolution

Keywords

  • Energy-band offset
  • GaAs
  • GaN
  • GaO(GdO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces. / Lay, T. S.; Hong, M.; Kwo, J.; Mannaerts, J. P.; Hung, W. H.; Huang, D. J.

In: Solid-State Electronics, Vol. 45, No. 9, 01.09.2001, p. 1679-1682.

Research output: Contribution to journalArticle

Lay, T. S. ; Hong, M. ; Kwo, J. ; Mannaerts, J. P. ; Hung, W. H. ; Huang, D. J. / Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces. In: Solid-State Electronics. 2001 ; Vol. 45, No. 9. pp. 1679-1682.
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T1 - Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

AU - Lay, T. S.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Hung, W. H.

AU - Huang, D. J.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

AB - The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

KW - Energy-band offset

KW - GaAs

KW - GaN

KW - GaO(GdO)

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