Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay; M. Hong; J. Kwo; J. P. Mannaerts; W. H. Hung; D. J. Huang

doi:10.1557/proc-573-131

Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay^*, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

Original language	English
Pages (from-to)	131-135
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	573
DOIs	https://doi.org/10.1557/proc-573-131
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, United States Duration: 1999 Apr 5 → 1999 Apr 7

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{6535342d798743c38f3ee9b7894badb2,

title = "Energy band offsets at a ga2o3(gd2o3)-gaas interface",

abstract = "We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.",

author = "Lay, {T. S.} and M. Hong and J. Kwo and Mannaerts, {J. P.} and Hung, {W. H.} and Huang, {D. J.}",

year = "1999",

doi = "10.1557/proc-573-131",

language = "English",

volume = "573",

pages = "131--135",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' ; Conference date: 05-04-1999 Through 07-04-1999",

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TY - JOUR

T1 - Energy band offsets at a ga2o3(gd2o3)-gaas interface

AU - Lay, T. S.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Hung, W. H.

AU - Huang, D. J.

PY - 1999

Y1 - 1999

N2 - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

AB - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

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DO - 10.1557/proc-573-131

M3 - Conference article

AN - SCOPUS:0032638466

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VL - 573

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EP - 135

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing'

Y2 - 5 April 1999 through 7 April 1999

ER -

Energy band offsets at a ga2o3(gd2o3)-gaas interface

Abstract

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