Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay*, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, United States
Duration: 1999 Apr 51999 Apr 7

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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