Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume573
Publication statusPublished - 1999 Dec 1

Fingerprint

Current voltage characteristics
Photoelectron spectroscopy
Valence bands
Conduction bands
Field emission
Band structure
energy bands
X rays
Electrons
Metals
metal oxide semiconductors
conduction bands
photoelectric emission
valence
electric potential
spectroscopy
electrons
x rays
Oxide semiconductors
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lay, T. S., Hong, M., Kwo, J., Mannaerts, J. P., Hung, W. H., & Huang, D. J. (1999). Energy band offsets at a ga2o3(gd2o3)-gaas interface. Materials Research Society Symposium - Proceedings, 573, 131-135.

Energy band offsets at a ga2o3(gd2o3)-gaas interface. / Lay, T. S.; Hong, M.; Kwo, J.; Mannaerts, J. P.; Hung, W. H.; Huang, D. J.

In: Materials Research Society Symposium - Proceedings, Vol. 573, 01.12.1999, p. 131-135.

Research output: Contribution to journalArticle

Lay, TS, Hong, M, Kwo, J, Mannaerts, JP, Hung, WH & Huang, DJ 1999, 'Energy band offsets at a ga2o3(gd2o3)-gaas interface', Materials Research Society Symposium - Proceedings, vol. 573, pp. 131-135.
Lay TS, Hong M, Kwo J, Mannaerts JP, Hung WH, Huang DJ. Energy band offsets at a ga2o3(gd2o3)-gaas interface. Materials Research Society Symposium - Proceedings. 1999 Dec 1;573:131-135.
Lay, T. S. ; Hong, M. ; Kwo, J. ; Mannaerts, J. P. ; Hung, W. H. ; Huang, D. J. / Energy band offsets at a ga2o3(gd2o3)-gaas interface. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 573. pp. 131-135.
@article{0f0cc00e87b74631a2db1c7faa67459f,
title = "Energy band offsets at a ga2o3(gd2o3)-gaas interface",
abstract = "We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.",
author = "Lay, {T. S.} and M. Hong and J. Kwo and Mannaerts, {J. P.} and Hung, {W. H.} and Huang, {D. J.}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "573",
pages = "131--135",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Energy band offsets at a ga2o3(gd2o3)-gaas interface

AU - Lay, T. S.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Hung, W. H.

AU - Huang, D. J.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

AB - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

UR - http://www.scopus.com/inward/record.url?scp=0032638466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032638466&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032638466

VL - 573

SP - 131

EP - 135

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -