Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume573
Publication statusPublished - 1999 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Lay, T. S., Hong, M., Kwo, J., Mannaerts, J. P., Hung, W. H., & Huang, D. J. (1999). Energy band offsets at a ga2o3(gd2o3)-gaas interface. Materials Research Society Symposium - Proceedings, 573, 131-135.