Endurance study of switching characteristics in NiO films

M. D. Lee; C. K. Lo; T. Y. Peng; S. Y. Chen; Y. D. Yao

doi:10.1016/j.jmmm.2006.11.075

Endurance study of switching characteristics in NiO films

M. D. Lee^*, C. K. Lo, T. Y. Peng, S. Y. Chen, Y. D. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

Original language	English
Pages (from-to)	e1030-e1031
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.11.075
Publication status	Published - 2007 Mar
Externally published	Yes

Keywords

Bi-stable memory switching effect
Nickel oxide
RRAM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.11.075

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title = "Endurance study of switching characteristics in NiO films",

abstract = "Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.",

keywords = "Bi-stable memory switching effect, Nickel oxide, RRAM",

author = "Lee, {M. D.} and Lo, {C. K.} and Peng, {T. Y.} and Chen, {S. Y.} and Yao, {Y. D.}",

year = "2007",

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T1 - Endurance study of switching characteristics in NiO films

AU - Lee, M. D.

AU - Lo, C. K.

AU - Peng, T. Y.

AU - Chen, S. Y.

AU - Yao, Y. D.

PY - 2007/3

Y1 - 2007/3

N2 - Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

AB - Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

KW - Bi-stable memory switching effect

KW - Nickel oxide

KW - RRAM

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M3 - Article

AN - SCOPUS:33847673185

SN - 0304-8853

VL - 310

SP - e1030-e1031

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Endurance study of switching characteristics in NiO films

Abstract

Keywords

ASJC Scopus subject areas

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