Endurance study of switching characteristics in NiO films

M. D. Lee*, C. K. Lo, T. Y. Peng, S. Y. Chen, Y. D. Yao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

Original languageEnglish
Pages (from-to)e1030-e1031
JournalJournal of Magnetism and Magnetic Materials
Issue number2 SUPPL. PART 3
Publication statusPublished - 2007 Mar
Externally publishedYes


  • Bi-stable memory switching effect
  • Nickel oxide
  • RRAM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Endurance study of switching characteristics in NiO films'. Together they form a unique fingerprint.

Cite this