Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, H. C. Tseng, C. Y. Lin, Z. X. Li, F. C. Hsieh, C. C. Wang, F. S. Chang, W. C. Ray, Y. Y. Tseng, S. T. Chang, T. C. Chen, M. H. Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

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Material Science