Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao; K. Y. Hsiang; Z. F. Lou; H. C. Tseng; C. Y. Lin; Z. X. Li; F. C. Hsieh; C. C. Wang; F. S. Chang; W. C. Ray; Y. Y. Tseng; S. T. Chang; T. C. Chen; M. H. Lee

doi:10.1109/VLSITechnologyandCir46769.2022.9830345

Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, H. C. Tseng, C. Y. Lin, Z. X. Li, F. C. Hsieh, C. C. Wang, F. S. Chang, W. C. Ray, Y. Y. Tseng, S. T. Chang, T. C. Chen, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	393-394
Number of pages	2
ISBN (Electronic)	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345
Publication status	Published - 2022
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: 2022 Jun 12 → 2022 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Print)	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	2022/06/12 → 2022/06/17

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSITechnologyandCir46769.2022.9830345

Cite this

Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Tseng, H. C., Lin, C. Y., Li, Z. X., Hsieh, F. C., Wang, C. C., Chang, F. S., Ray, W. C., Tseng, Y. Y., Chang, S. T., Chen, T. C., & Lee, M. H. (2022). Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 393-394). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345

Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. / Liao, C. Y.; Hsiang, K. Y.; Lou, Z. F. et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 393-394 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, CY, Hsiang, KY, Lou, ZF, Tseng, HC, Lin, CY, Li, ZX, Hsieh, FC, Wang, CC, Chang, FS, Ray, WC, Tseng, YY, Chang, ST, Chen, TC & Lee, MH 2022, Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 393-394, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 2022/06/12. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345

Liao CY, Hsiang KY, Lou ZF, Tseng HC, Lin CY, Li ZX et al. Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 393-394. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830345

Liao, C. Y. ; Hsiang, K. Y. ; Lou, Z. F. et al. / Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 393-394 (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM",

abstract = "After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Lou, {Z. F.} and Tseng, {H. C.} and Lin, {C. Y.} and Li, {Z. X.} and Hsieh, {F. C.} and Wang, {C. C.} and Chang, {F. S.} and Ray, {W. C.} and Tseng, {Y. Y.} and Chang, {S. T.} and Chen, {T. C.} and Lee, {M. H.}",

note = "Funding Information: Acknowledgments: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under grants 110-2218-E-A49-014-MBK, 110-2218-E-003-005, and 110-2622-8-002-014. The process was supported by the Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

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doi = "10.1109/VLSITechnologyandCir46769.2022.9830345",

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AU - Hsiang, K. Y.

AU - Lou, Z. F.

AU - Tseng, H. C.

AU - Lin, C. Y.

AU - Li, Z. X.

AU - Hsieh, F. C.

AU - Wang, C. C.

AU - Chang, F. S.

AU - Ray, W. C.

AU - Tseng, Y. Y.

AU - Chang, S. T.

AU - Chen, T. C.

AU - Lee, M. H.

N1 - Funding Information: Acknowledgments: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under grants 110-2218-E-A49-014-MBK, 110-2218-E-003-005, and 110-2622-8-002-014. The process was supported by the Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: © 2022 IEEE.

PY - 2022

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N2 - After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

AB - After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

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