Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee; Chia Jung Lee; Chih Hao Chen; Tien Chang Lu; Hao Chung Kuo

doi:10.1109/JSTQE.2010.2064287

Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee^*, Chia Jung Lee, Chih Hao Chen, Tien Chang Lu, Hao Chung Kuo

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (I_O = 2×10^-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm² (I_O1=1×10 ^-25AIO₂=1×10^-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

Original language	English
Article number	5579987
Pages (from-to)	985-989
Number of pages	5
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2064287
Publication status	Published - 2011 Jul

Keywords

Light-emitting diode (LED)
nanorod
tunneling effect

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2010.2064287

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title = "Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect",

abstract = "The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.",

keywords = "Light-emitting diode (LED), nanorod, tunneling effect",

author = "Lee, {Ya Ju} and Lee, {Chia Jung} and Chen, {Chih Hao} and Lu, {Tien Chang} and Kuo, {Hao Chung}",

note = "Funding Information: Manuscript received June 28, 2010; revised July 20, 2010; accepted July 29, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Science Council of the Republic of China in Taiwan under Contract NSC-98-2112-M003-001-MY2.",

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doi = "10.1109/JSTQE.2010.2064287",

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AU - Lee, Chia Jung

AU - Chen, Chih Hao

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

N1 - Funding Information: Manuscript received June 28, 2010; revised July 20, 2010; accepted July 29, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Science Council of the Republic of China in Taiwan under Contract NSC-98-2112-M003-001-MY2.

PY - 2011/7

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N2 - The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

AB - The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

KW - Light-emitting diode (LED)

KW - nanorod

KW - tunneling effect

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Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

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Keywords

ASJC Scopus subject areas

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