Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen, Tien Chang Lu, Hao Chung Kuo

Research output: Contribution to journalArticle

13 Citations (Scopus)


The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

Original languageEnglish
Article number5579987
Pages (from-to)985-989
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number4
Publication statusPublished - 2011 Jul 1



  • Light-emitting diode (LED)
  • nanorod
  • tunneling effect

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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