Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen, Tien Chang Lu, Hao Chung Kuo

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

Original languageEnglish
Article number5579987
Pages (from-to)985-989
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume17
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Nanorods
nanorods
Light emitting diodes
light emitting diodes
Physical properties
physical properties
Nanoprobes
Leakage currents
Field emission
field emission
leakage
Electron microscopes
electron microscopes
chips
Scanning
Defects
scanning
defects
Electric potential
electric potential

Keywords

  • Light-emitting diode (LED)
  • nanorod
  • tunneling effect

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Elucidating the physical property of the InGaN nanorod light-emitting diode : Large tunneling effect. / Lee, Ya Ju; Lee, Chia Jung; Chen, Chih Hao; Lu, Tien Chang; Kuo, Hao Chung.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 17, No. 4, 5579987, 01.07.2011, p. 985-989.

Research output: Contribution to journalArticle

Lee, Ya Ju ; Lee, Chia Jung ; Chen, Chih Hao ; Lu, Tien Chang ; Kuo, Hao Chung. / Elucidating the physical property of the InGaN nanorod light-emitting diode : Large tunneling effect. In: IEEE Journal on Selected Topics in Quantum Electronics. 2011 ; Vol. 17, No. 4. pp. 985-989.
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