Electrooptical properties of the Si δ-doped GaAs/AlGaAs triple-barrier resonant tunneling structure

Chien-Rong Lu, Szu Ku Du, Jia Lian Chang

Research output: Contribution to journalArticle

Abstract

The electrooptical properties of a Si δ-doped GaAs/Al0.3Ga0.7As triple-barrier resonant tunneling (TRT) nanostructure have been studied by photoreflectance spectroscopy from 20 K to room temperature. The TRT structure forms two coupled quantum wells. The first and the second electronic subbands in the wide well are partially filled, and the corresponding optical transitions are suppressed. The strongest spectral feature is due to the enhancement of the subband resonance between the two coupled wells. The ionized δ-doping centers in the Al0.3Ga0.7As side barriers can induce internal electric fields, and cause oscillatory spectral features when the photon energy is larger than the gap of Al0.3Ga0.7As. Analyzing the oscillatory part of the spectrum gives an internal electric field of 32 kV/cm, and an estimation of the electron subband energy in the ionized δ-doping center induced potential wells.

Original languageEnglish
Pages (from-to)551-556
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 PART A
Publication statusPublished - 1996 Feb 1

Fingerprint

Resonant tunneling
resonant tunneling
aluminum gallium arsenides
Electric fields
Doping (additives)
Optical transitions
Semiconductor quantum wells
Nanostructures
Photons
electric fields
Spectroscopy
optical transition
Electrons
quantum wells
electron energy
augmentation
causes
photons
room temperature
electronics

Keywords

  • Franz-Keldysh oscillations
  • GaAs/AlGaAs
  • Photoreflectance
  • Triple-barrier resonant tunneling structure
  • δ-doping

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Electrooptical properties of the Si δ-doped GaAs/AlGaAs triple-barrier resonant tunneling structure",
abstract = "The electrooptical properties of a Si δ-doped GaAs/Al0.3Ga0.7As triple-barrier resonant tunneling (TRT) nanostructure have been studied by photoreflectance spectroscopy from 20 K to room temperature. The TRT structure forms two coupled quantum wells. The first and the second electronic subbands in the wide well are partially filled, and the corresponding optical transitions are suppressed. The strongest spectral feature is due to the enhancement of the subband resonance between the two coupled wells. The ionized δ-doping centers in the Al0.3Ga0.7As side barriers can induce internal electric fields, and cause oscillatory spectral features when the photon energy is larger than the gap of Al0.3Ga0.7As. Analyzing the oscillatory part of the spectrum gives an internal electric field of 32 kV/cm, and an estimation of the electron subband energy in the ionized δ-doping center induced potential wells.",
keywords = "Franz-Keldysh oscillations, GaAs/AlGaAs, Photoreflectance, Triple-barrier resonant tunneling structure, δ-doping",
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T1 - Electrooptical properties of the Si δ-doped GaAs/AlGaAs triple-barrier resonant tunneling structure

AU - Lu, Chien-Rong

AU - Du, Szu Ku

AU - Chang, Jia Lian

PY - 1996/2/1

Y1 - 1996/2/1

N2 - The electrooptical properties of a Si δ-doped GaAs/Al0.3Ga0.7As triple-barrier resonant tunneling (TRT) nanostructure have been studied by photoreflectance spectroscopy from 20 K to room temperature. The TRT structure forms two coupled quantum wells. The first and the second electronic subbands in the wide well are partially filled, and the corresponding optical transitions are suppressed. The strongest spectral feature is due to the enhancement of the subband resonance between the two coupled wells. The ionized δ-doping centers in the Al0.3Ga0.7As side barriers can induce internal electric fields, and cause oscillatory spectral features when the photon energy is larger than the gap of Al0.3Ga0.7As. Analyzing the oscillatory part of the spectrum gives an internal electric field of 32 kV/cm, and an estimation of the electron subband energy in the ionized δ-doping center induced potential wells.

AB - The electrooptical properties of a Si δ-doped GaAs/Al0.3Ga0.7As triple-barrier resonant tunneling (TRT) nanostructure have been studied by photoreflectance spectroscopy from 20 K to room temperature. The TRT structure forms two coupled quantum wells. The first and the second electronic subbands in the wide well are partially filled, and the corresponding optical transitions are suppressed. The strongest spectral feature is due to the enhancement of the subband resonance between the two coupled wells. The ionized δ-doping centers in the Al0.3Ga0.7As side barriers can induce internal electric fields, and cause oscillatory spectral features when the photon energy is larger than the gap of Al0.3Ga0.7As. Analyzing the oscillatory part of the spectrum gives an internal electric field of 32 kV/cm, and an estimation of the electron subband energy in the ionized δ-doping center induced potential wells.

KW - Franz-Keldysh oscillations

KW - GaAs/AlGaAs

KW - Photoreflectance

KW - Triple-barrier resonant tunneling structure

KW - δ-doping

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