Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

C. W. Pao; P. D. Babu; H. M. Tsai; J. W. Chiou; S. C. Ray; S. C. Yang; F. Z. Chien; W. F. Pong; M. H. Tsai; C. W. Hsu; L. C. Chen; C. C. Chen; K. H. Chen; H. J. Lin; J. F. Lee; J. H. Guo

doi:10.1063/1.2207836

Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

C. W. Pao, P. D. Babu, H. M. Tsai, J. W. Chiou, S. C. Ray, S. C. Yang, F. Z. Chien, W. F. Pong^*, M. H. Tsai, C. W. Hsu, L. C. Chen, C. C. Chen, K. H. Chen, H. J. Lin, J. F. Lee, J. H. Guo

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

Original language	English
Article number	223113
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2207836
Publication status	Published - 2006 May 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Pao, C. W., Babu, P. D., Tsai, H. M., Chiou, J. W., Ray, S. C., Yang, S. C., Chien, F. Z., Pong, W. F., Tsai, M. H., Hsu, C. W., Chen, L. C., Chen, C. C., Chen, K. H., Lin, H. J., Lee, J. F., & Guo, J. H. (2006). Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy. Applied Physics Letters, 88(22), Article 223113. https://doi.org/10.1063/1.2207836

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title = "Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy",

abstract = "Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.",

author = "Pao, {C. W.} and Babu, {P. D.} and Tsai, {H. M.} and Chiou, {J. W.} and Ray, {S. C.} and Yang, {S. C.} and Chien, {F. Z.} and Pong, {W. F.} and Tsai, {M. H.} and Hsu, {C. W.} and Chen, {L. C.} and Chen, {C. C.} and Chen, {K. H.} and Lin, {H. J.} and Lee, {J. F.} and Guo, {J. H.}",

year = "2006",

month = may,

day = "29",

doi = "10.1063/1.2207836",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

AU - Pao, C. W.

AU - Babu, P. D.

AU - Tsai, H. M.

AU - Chiou, J. W.

AU - Ray, S. C.

AU - Yang, S. C.

AU - Chien, F. Z.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Hsu, C. W.

AU - Chen, L. C.

AU - Chen, C. C.

AU - Chen, K. H.

AU - Lin, H. J.

AU - Lee, J. F.

AU - Guo, J. H.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

AB - Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

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ER -

Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

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