Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou; J. C. Jan; H. M. Tsai; W. F. Pong; M. H. Tsai; I. H. Hong; R. Klauser; J. F. Lee; C. W. Hsu; H. M. Lin; C. C. Chen; C. H. Shen; L. C. Chen; K. H. Chen

doi:10.1063/1.1579871

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou
, J. C. Jan
, H. M. Tsai
, W. F. Pong^*
, M. H. Tsai
, I. H. Hong
, R. Klauser
, J. F. Lee
, C. W. Hsu
, H. M. Lin
, C. C. Chen
, C. H. Shen
, L. C. Chen
, K. H. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

Original language	English
Pages (from-to)	3949-3951
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1579871
Publication status	Published - 2003 Jun 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1579871

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Chiou, J. W., Jan, J. C., Tsai, H. M., Pong, W. F., Tsai, M. H., Hong, I. H., Klauser, R., Lee, J. F., Hsu, C. W., Lin, H. M., Chen, C. C., Shen, C. H., Chen, L. C., & Chen, K. H. (2003). Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. Applied Physics Letters, 82(22), 3949-3951. https://doi.org/10.1063/1.1579871

@article{0e3966b55c654c75992e3d754589adec,

title = "Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy",

abstract = "Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.",

author = "Chiou, \{J. W.\} and Jan, \{J. C.\} and Tsai, \{H. M.\} and Pong, \{W. F.\} and Tsai, \{M. H.\} and Hong, \{I. H.\} and R. Klauser and Lee, \{J. F.\} and Hsu, \{C. W.\} and Lin, \{H. M.\} and Chen, \{C. C.\} and Shen, \{C. H.\} and Chen, \{L. C.\} and Chen, \{K. H.\}",

year = "2003",

month = jun,

day = "2",

doi = "10.1063/1.1579871",

language = "English",

volume = "82",

pages = "3949--3951",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "22",

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TY - JOUR

T1 - Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

AU - Chiou, J. W.

AU - Jan, J. C.

AU - Tsai, H. M.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Hong, I. H.

AU - Klauser, R.

AU - Lee, J. F.

AU - Hsu, C. W.

AU - Lin, H. M.

AU - Chen, C. C.

AU - Shen, C. H.

AU - Chen, L. C.

AU - Chen, K. H.

PY - 2003/6/2

Y1 - 2003/6/2

N2 - Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

AB - Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

UR - https://www.scopus.com/pages/publications/0038003680

UR - https://www.scopus.com/pages/publications/0038003680#tab=citedBy

U2 - 10.1063/1.1579871

DO - 10.1063/1.1579871

M3 - Article

AN - SCOPUS:0038003680

SN - 0003-6951

VL - 82

SP - 3949

EP - 3951

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

Abstract

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