Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou, J. C. Jan, H. M. Tsai, W. F. Pong, M. H. Tsai, I. H. Hong, R. Klauser, J. F. Lee, C. W. Hsu, H. M. Lin, C. C. Chen, C. H. Shen, L. C. Chen, K. H. Chen

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Abstract

Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

Original languageEnglish
Pages (from-to)3949-3951
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number22
DOIs
Publication statusPublished - 2003 Jun 2

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chiou, J. W., Jan, J. C., Tsai, H. M., Pong, W. F., Tsai, M. H., Hong, I. H., Klauser, R., Lee, J. F., Hsu, C. W., Lin, H. M., Chen, C. C., Shen, C. H., Chen, L. C., & Chen, K. H. (2003). Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. Applied Physics Letters, 82(22), 3949-3951. https://doi.org/10.1063/1.1579871