Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou, J. C. Jan, H. M. Tsai, W. F. Pong, M. H. Tsai, I. H. Hong, R. Klauser, J. F. Lee, C. W. Hsu, H. M. Lin, C. C. Chen, C. H. Shen, L. C. Chen, K. H. Chen

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

Original languageEnglish
Pages (from-to)3949-3951
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number22
DOIs
Publication statusPublished - 2003 Jun 2

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gallium nitrides
x ray absorption
x ray spectroscopy
absorption spectroscopy
photoelectrons
nanowires
electronic structure
microscopy
scanning
transition probabilities
valence
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chiou, J. W., Jan, J. C., Tsai, H. M., Pong, W. F., Tsai, M. H., Hong, I. H., ... Chen, K. H. (2003). Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. Applied Physics Letters, 82(22), 3949-3951. https://doi.org/10.1063/1.1579871

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. / Chiou, J. W.; Jan, J. C.; Tsai, H. M.; Pong, W. F.; Tsai, M. H.; Hong, I. H.; Klauser, R.; Lee, J. F.; Hsu, C. W.; Lin, H. M.; Chen, C. C.; Shen, C. H.; Chen, L. C.; Chen, K. H.

In: Applied Physics Letters, Vol. 82, No. 22, 02.06.2003, p. 3949-3951.

Research output: Contribution to journalArticle

Chiou, JW, Jan, JC, Tsai, HM, Pong, WF, Tsai, MH, Hong, IH, Klauser, R, Lee, JF, Hsu, CW, Lin, HM, Chen, CC, Shen, CH, Chen, LC & Chen, KH 2003, 'Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy', Applied Physics Letters, vol. 82, no. 22, pp. 3949-3951. https://doi.org/10.1063/1.1579871
Chiou, J. W. ; Jan, J. C. ; Tsai, H. M. ; Pong, W. F. ; Tsai, M. H. ; Hong, I. H. ; Klauser, R. ; Lee, J. F. ; Hsu, C. W. ; Lin, H. M. ; Chen, C. C. ; Shen, C. H. ; Chen, L. C. ; Chen, K. H. / Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. In: Applied Physics Letters. 2003 ; Vol. 82, No. 22. pp. 3949-3951.
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