Electronic structure and transport properties of La0.7Ce0.3MnO3

W. J. Chang*, J. Y. Tsai, H. T. Jeng, J. Y. Lin, Kenneth Y.J. Zhang, H. L. Liu, J. M. Lee, J. M. Chen, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in La0.7Ce0.3MnO3 thin films (LCeMO). The XAS results are consistent with those obtained from LDA+U calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in La0.7Ca0.3MnO3 (LCaMO). The Hall measurements indicate that in LCeMO the carriers are still displaying the characteristics of holes as LDA+U calculations predict. Analyses of the optical reflectance spectra evidently disapprove the scenario that the present LCeMO might have been dominated by the La-deficient phases.

Original languageEnglish
Article number132410
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number13
Publication statusPublished - 2005 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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