Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt; S. Hövel; C. Brenner; M. R. Hofmann; F. Y. Lo; D. Reuter; A. D. Wieck; E. Schuster; W. Keune; K. Westerholt

doi:10.1063/1.1996843

Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt^*, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

Original language	English
Article number	032502
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1996843
Publication status	Published - 2005 Jul 18
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electron spin injection into GaAs from ferromagnetic contacts in remanence",

abstract = "We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.",

author = "Gerhardt, {N. C.} and S. H{\"o}vel and C. Brenner and Hofmann, {M. R.} and Lo, {F. Y.} and D. Reuter and Wieck, {A. D.} and E. Schuster and W. Keune and K. Westerholt",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Sonderforschungsbereich 491). We thank T. Last, M. Sostarich, and U. Kunze for stimulating discussions, and U. v. H{\"o}rsten and T. Mennecke for valuable technical assistance.",

year = "2005",

month = jul,

day = "18",

doi = "10.1063/1.1996843",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Electron spin injection into GaAs from ferromagnetic contacts in remanence

AU - Gerhardt, N. C.

AU - Hövel, S.

AU - Brenner, C.

AU - Hofmann, M. R.

AU - Lo, F. Y.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Schuster, E.

AU - Keune, W.

AU - Westerholt, K.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Sonderforschungsbereich 491). We thank T. Last, M. Sostarich, and U. Kunze for stimulating discussions, and U. v. Hörsten and T. Mennecke for valuable technical assistance.

PY - 2005/7/18

Y1 - 2005/7/18

N2 - We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

AB - We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

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DO - 10.1063/1.1996843

M3 - Article

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VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032502

ER -

Electron spin injection into GaAs from ferromagnetic contacts in remanence

Abstract

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