Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt*, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

Original languageEnglish
Article number032502
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2005 Jul 18
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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