Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

Original languageEnglish
Article number032502
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2005 Jul 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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