Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt, S. Hövel, C. Brenner, M. R. Hofmann, Fang-Yuh Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

Original languageEnglish
Article number032502
JournalApplied Physics Letters
Volume87
Issue number3
DOIs
Publication statusPublished - 2005 Jul 18

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remanence
circular polarization
electron spin
laminates
electric contacts
light emitting diodes
injection
anisotropy
geometry

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F-Y., Reuter, D., ... Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters, 87(3), [032502]. https://doi.org/10.1063/1.1996843

Electron spin injection into GaAs from ferromagnetic contacts in remanence. / Gerhardt, N. C.; Hövel, S.; Brenner, C.; Hofmann, M. R.; Lo, Fang-Yuh; Reuter, D.; Wieck, A. D.; Schuster, E.; Keune, W.; Westerholt, K.

In: Applied Physics Letters, Vol. 87, No. 3, 032502, 18.07.2005.

Research output: Contribution to journalArticle

Gerhardt, NC, Hövel, S, Brenner, C, Hofmann, MR, Lo, F-Y, Reuter, D, Wieck, AD, Schuster, E, Keune, W & Westerholt, K 2005, 'Electron spin injection into GaAs from ferromagnetic contacts in remanence', Applied Physics Letters, vol. 87, no. 3, 032502. https://doi.org/10.1063/1.1996843
Gerhardt NC, Hövel S, Brenner C, Hofmann MR, Lo F-Y, Reuter D et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. 2005 Jul 18;87(3). 032502. https://doi.org/10.1063/1.1996843
Gerhardt, N. C. ; Hövel, S. ; Brenner, C. ; Hofmann, M. R. ; Lo, Fang-Yuh ; Reuter, D. ; Wieck, A. D. ; Schuster, E. ; Keune, W. ; Westerholt, K. / Electron spin injection into GaAs from ferromagnetic contacts in remanence. In: Applied Physics Letters. 2005 ; Vol. 87, No. 3.
@article{30b8ea648e93459492c437c0500f3113,
title = "Electron spin injection into GaAs from ferromagnetic contacts in remanence",
abstract = "We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75{\%} at 90 K.",
author = "Gerhardt, {N. C.} and S. H{\"o}vel and C. Brenner and Hofmann, {M. R.} and Fang-Yuh Lo and D. Reuter and Wieck, {A. D.} and E. Schuster and W. Keune and K. Westerholt",
year = "2005",
month = "7",
day = "18",
doi = "10.1063/1.1996843",
language = "English",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Electron spin injection into GaAs from ferromagnetic contacts in remanence

AU - Gerhardt, N. C.

AU - Hövel, S.

AU - Brenner, C.

AU - Hofmann, M. R.

AU - Lo, Fang-Yuh

AU - Reuter, D.

AU - Wieck, A. D.

AU - Schuster, E.

AU - Keune, W.

AU - Westerholt, K.

PY - 2005/7/18

Y1 - 2005/7/18

N2 - We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

AB - We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

UR - http://www.scopus.com/inward/record.url?scp=24144478522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24144478522&partnerID=8YFLogxK

U2 - 10.1063/1.1996843

DO - 10.1063/1.1996843

M3 - Article

AN - SCOPUS:24144478522

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032502

ER -