Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

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Abstract

We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

Original languageEnglish
Article number032502
JournalApplied Physics Letters
Volume87
Issue number3
DOIs
Publication statusPublished - 2005 Jul 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F. Y., Reuter, D., Wieck, A. D., Schuster, E., Keune, W., & Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters, 87(3), [032502]. https://doi.org/10.1063/1.1996843