Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2

Jiang Tsu Yu; Shoei Sheng Lin; Ying Sheng Huang

doi:10.1063/1.346612

Electron paramagnetic resonance study of the solid solutions Ru(S _1-xSe_x)₂

Jiang Tsu Yu^*
, Shoei Sheng Lin
, Ying Sheng Huang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S_1-xSe_x)₂ single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X^2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

Original language	English
Pages (from-to)	1796-1799
Number of pages	4
Journal	Journal of Applied Physics
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.346612
Publication status	Published - 1990

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.346612

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title = "Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2",

abstract = "The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.",

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AU - Yu, Jiang Tsu

AU - Lin, Shoei Sheng

AU - Huang, Ying Sheng

PY - 1990

Y1 - 1990

N2 - The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

AB - The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Electron paramagnetic resonance study of the solid solutions Ru(S _1-xSe_x)₂

Abstract

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