Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2

Jiang Tsu Yu*, Shoei Sheng Lin, Ying Sheng Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

Original languageEnglish
Pages (from-to)1796-1799
Number of pages4
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 1990

ASJC Scopus subject areas

  • General Physics and Astronomy


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