Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2

Jiang Tsu Yu; Shoei Sheng Lin; Ying Sheng Huang

doi:10.1063/1.346612

Electron paramagnetic resonance study of the solid solutions Ru(S _1-xSe_x)₂

Jiang Tsu Yu^*, Shoei Sheng Lin, Ying Sheng Huang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S_1-xSe_x)₂ single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X^2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

Original language	English
Pages (from-to)	1796-1799
Number of pages	4
Journal	Journal of Applied Physics
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.346612
Publication status	Published - 1990

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.346612

Cite this

@article{0cd48ff5d45a481a9bcf504a49243cc7,

title = "Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2",

abstract = "The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.",

author = "Yu, {Jiang Tsu} and Lin, {Shoei Sheng} and Huang, {Ying Sheng}",

year = "1990",

doi = "10.1063/1.346612",

language = "English",

volume = "68",

pages = "1796--1799",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Electron paramagnetic resonance study of the solid solutions Ru(S 1-xSex)2

AU - Yu, Jiang Tsu

AU - Lin, Shoei Sheng

AU - Huang, Ying Sheng

PY - 1990

Y1 - 1990

N2 - The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

AB - The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=36549101650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549101650&partnerID=8YFLogxK

U2 - 10.1063/1.346612

DO - 10.1063/1.346612

M3 - Article

AN - SCOPUS:36549101650

SN - 0021-8979

VL - 68

SP - 1796

EP - 1799

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Electron paramagnetic resonance study of the solid solutions Ru(S _1-xSe_x)₂

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this