Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo*, Byung Jin Cho, F. Gao, S. J. Lee, M. H. Lee, C. Y. Yu, C. W. Liu, L. J. Tang, T. W. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)


We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

Original languageEnglish
Pages (from-to)761-763
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2005 Oct
Externally publishedYes


  • Effective electron mobility
  • Ge
  • High-K gate dielectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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