Abstract
We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.
Original language | English |
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Pages (from-to) | 761-763 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2005 Oct |
Externally published | Yes |
Keywords
- Effective electron mobility
- Ge
- High-K gate dielectric
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering