Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo, Byung Jin Cho, F. Gao, S. J. Lee, Min-Hung Lee, C. Y. Yu, C. W. Liu, L. J. Tang, T. W. Lee

    Research output: Contribution to journalArticlepeer-review

    49 Citations (Scopus)

    Abstract

    We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

    Original languageEnglish
    Pages (from-to)761-763
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume26
    Issue number10
    DOIs
    Publication statusPublished - 2005 Oct 1

    Keywords

    • Effective electron mobility
    • Ge
    • High-K gate dielectric

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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