Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo, Byung Jin Cho, F. Gao, S. J. Lee, Min-Hung Lee, C. Y. Yu, C. W. Liu, L. J. Tang, T. W. Lee

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

Original languageEnglish
Pages (from-to)761-763
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

Keywords

  • Effective electron mobility
  • Ge
  • High-K gate dielectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Yeo, C. C., Cho, B. J., Gao, F., Lee, S. J., Lee, M-H., Yu, C. Y., Liu, C. W., Tang, L. J., & Lee, T. W. (2005). Electron mobility enhancement using ultrathin pure Ge on Si substrate. IEEE Electron Device Letters, 26(10), 761-763. https://doi.org/10.1109/LED.2005.855420