Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee; S. J. Lin; J. H. Huang; C. T. Chia; I. N. Lin

Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee, S. J. Lin, J. H. Huang, C. T. Chia, I. N. Lin^*

^*Corresponding author for this work

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp²-bonded grain boundaries in finer grain nano-diamond films.

Original language	English
Title of host publication	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
Editors	A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
Pages	126-127
Number of pages	2
Publication status	Published - 2004
Event	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States Duration: 2004 Jul 11 → 2004 Jul 16

Publication series

Name	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

Other

Other	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
Country/Territory	United States
City	Cambridge, MA
Period	2004/07/11 → 2004/07/16

ASJC Scopus subject areas

General Engineering

Cite this

Lee, Y. C., Lin, S. J., Huang, J. H., Chia, C. T., & Lin, I. N. (2004). Electron field emission property of boron doping nano-crystalline diamond. In A. I. Akinwande, L.-Y. Chen, I. Kymissis, & C.-Y. Hong (Eds.), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 (pp. 126-127). (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

Electron field emission property of boron doping nano-crystalline diamond. / Lee, Y. C.; Lin, S. J.; Huang, J. H. et al.
Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. ed. / A.I. Akinwande; L.-Y. Chen; I. Kymissis; C.-Y. Hong. 2004. p. 126-127 (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YC, Lin, SJ, Huang, JH, Chia, CT & Lin, IN 2004, Electron field emission property of boron doping nano-crystalline diamond. in AI Akinwande, L-Y Chen, I Kymissis & C-Y Hong (eds), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004, pp. 126-127, Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004, Cambridge, MA, United States, 2004/07/11.

Lee YC, Lin SJ, Huang JH, Chia CT, Lin IN. Electron field emission property of boron doping nano-crystalline diamond. In Akinwande AI, Chen LY, Kymissis I, Hong CY, editors, Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. 2004. p. 126-127. (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

Lee, Y. C. ; Lin, S. J. ; Huang, J. H. et al. / Electron field emission property of boron doping nano-crystalline diamond. Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. editor / A.I. Akinwande ; L.-Y. Chen ; I. Kymissis ; C.-Y. Hong. 2004. pp. 126-127 (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

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abstract = "Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.",

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AB - Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.

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ER -

Electron field emission property of boron doping nano-crystalline diamond

Abstract

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