Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee, S. J. Lin, J. H. Huang, C. T. Chia, I. N. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.

Original languageEnglish
Title of host publicationTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
EditorsA.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
Pages126-127
Number of pages2
Publication statusPublished - 2004 Dec 1
EventTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States
Duration: 2004 Jul 112004 Jul 16

Publication series

NameTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

Other

OtherTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
CountryUnited States
CityCambridge, MA
Period04/7/1104/7/16

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lee, Y. C., Lin, S. J., Huang, J. H., Chia, C. T., & Lin, I. N. (2004). Electron field emission property of boron doping nano-crystalline diamond. In A. I. Akinwande, L-Y. Chen, I. Kymissis, & C-Y. Hong (Eds.), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 (pp. 126-127). (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).