Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Heng Sheng Huang, Piyas Samanta, Tsung Jian Tzeng, Shuang Yuan Chen, Chuan Hsi Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The kinetics of zero-field and field-induced detrapping of electrons trapped in HfSi xO y and HfSiON after positive bias stress on n +-polycrystalline silicon (polySi) gate of n-type metal-oxide-semiconductor (nMOS) capacitors are experimentally investigated. The self detrapping follows a simple logarithmic relation with time while field-induced detrapping upon reversing the stress voltage obeys a simple first-order exponential decay suggesting mono energetic shallow traps associated with tunnel emission of trapped electrons. Finally, our investigation raises questions about the validity of the widely used distributed capture cross section model of electron traps to explain the threshold voltage instability in MOS devices with hafnium silicate gate stacks.

Original languageEnglish
Article number023501
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
Publication statusPublished - 2012 Jan 9

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hafnium
silicates
traps
n-type semiconductors
electrons
reversing
metal oxide semiconductors
threshold voltage
absorption cross sections
tunnels
capacitors
kinetics
electric potential
silicon
decay

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks. / Huang, Heng Sheng; Samanta, Piyas; Tzeng, Tsung Jian; Chen, Shuang Yuan; Liu, Chuan Hsi.

In: Applied Physics Letters, Vol. 100, No. 2, 023501, 09.01.2012.

Research output: Contribution to journalArticle

Huang, Heng Sheng ; Samanta, Piyas ; Tzeng, Tsung Jian ; Chen, Shuang Yuan ; Liu, Chuan Hsi. / Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks. In: Applied Physics Letters. 2012 ; Vol. 100, No. 2.
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