Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu; Jung Jie Huang; Yung Pei Chen; I. Chun Cheng; Jian Z. Chen; Min Hung Lee

doi:10.1109/LED.2009.2039023

Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu^*, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min Hung Lee

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

Original language	English
Article number	5404409
Pages (from-to)	222-224
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2039023
Publication status	Published - 2010 Mar

Keywords

Mechanical strain
Nanocrystalline silicon (nc-Si)
Semiconductor device measurements
Silicon
Stability
Thin-film transistors (TFTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2039023

Cite this

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title = "Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors",

abstract = "We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.",

keywords = "Mechanical strain, Nanocrystalline silicon (nc-Si), Semiconductor device measurements, Silicon, Stability, Thin-film transistors (TFTs)",

author = "Chiu, {I. Chung} and Huang, {Jung Jie} and Chen, {Yung Pei} and Cheng, {I. Chun} and Chen, {Jian Z.} and Lee, {Min Hung}",

note = "Funding Information: Manuscript received October 29, 2009. First published February 2, 2010; current version published February 24, 2010. This work was supported by the Display Technology Center, Industrial Technology Research Institute, Taiwan. The works of I-C. Cheng and J. Z. Chen were supported by the National Science Council, Taiwan, under Grants NSC 98-2120-M-002-005 and NSC 98-2221-E-002-169, respectively. The review of this letter was arranged by Editor A. Nathan.",

year = "2010",

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doi = "10.1109/LED.2009.2039023",

language = "English",

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pages = "222--224",

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AU - Chiu, I. Chung

AU - Huang, Jung Jie

AU - Chen, Yung Pei

AU - Cheng, I. Chun

AU - Chen, Jian Z.

AU - Lee, Min Hung

N1 - Funding Information: Manuscript received October 29, 2009. First published February 2, 2010; current version published February 24, 2010. This work was supported by the Display Technology Center, Industrial Technology Research Institute, Taiwan. The works of I-C. Cheng and J. Z. Chen were supported by the National Science Council, Taiwan, under Grants NSC 98-2120-M-002-005 and NSC 98-2221-E-002-169, respectively. The review of this letter was arranged by Editor A. Nathan.

PY - 2010/3

Y1 - 2010/3

N2 - We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

AB - We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

KW - Mechanical strain

KW - Nanocrystalline silicon (nc-Si)

KW - Semiconductor device measurements

KW - Silicon

KW - Stability

KW - Thin-film transistors (TFTs)

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Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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