Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu*, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min Hung Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

Original languageEnglish
Article number5404409
Pages (from-to)222-224
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2010 Mar


  • Mechanical strain
  • Nanocrystalline silicon (nc-Si)
  • Semiconductor device measurements
  • Silicon
  • Stability
  • Thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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