Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min-Hung Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

Original languageEnglish
Article number5404409
Pages (from-to)222-224
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

Fingerprint

Nanocrystalline silicon
Thin film transistors
Tensile strain
Threshold voltage
Polyimides
Metal foil
Electrons
Substrates

Keywords

  • Mechanical strain
  • Nanocrystalline silicon (nc-Si)
  • Semiconductor device measurements
  • Silicon
  • Stability
  • Thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors. / Chiu, I. Chung; Huang, Jung Jie; Chen, Yung Pei; Cheng, I. Chun; Chen, Jian Z.; Lee, Min-Hung.

In: IEEE Electron Device Letters, Vol. 31, No. 3, 5404409, 01.03.2010, p. 222-224.

Research output: Contribution to journalArticle

Chiu, I. Chung ; Huang, Jung Jie ; Chen, Yung Pei ; Cheng, I. Chun ; Chen, Jian Z. ; Lee, Min-Hung. / Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 3. pp. 222-224.
@article{f898e8c424594589ba072b9cb1ad66c5,
title = "Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors",
abstract = "We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.",
keywords = "Mechanical strain, Nanocrystalline silicon (nc-Si), Semiconductor device measurements, Silicon, Stability, Thin-film transistors (TFTs)",
author = "Chiu, {I. Chung} and Huang, {Jung Jie} and Chen, {Yung Pei} and Cheng, {I. Chun} and Chen, {Jian Z.} and Min-Hung Lee",
year = "2010",
month = "3",
day = "1",
doi = "10.1109/LED.2009.2039023",
language = "English",
volume = "31",
pages = "222--224",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

AU - Chiu, I. Chung

AU - Huang, Jung Jie

AU - Chen, Yung Pei

AU - Cheng, I. Chun

AU - Chen, Jian Z.

AU - Lee, Min-Hung

PY - 2010/3/1

Y1 - 2010/3/1

N2 - We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

AB - We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

KW - Mechanical strain

KW - Nanocrystalline silicon (nc-Si)

KW - Semiconductor device measurements

KW - Silicon

KW - Stability

KW - Thin-film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=77649190935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77649190935&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2039023

DO - 10.1109/LED.2009.2039023

M3 - Article

VL - 31

SP - 222

EP - 224

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

M1 - 5404409

ER -