Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min Hung Lee

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

    Original languageEnglish
    Article number5404409
    Pages (from-to)222-224
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number3
    Publication statusPublished - 2010 Mar 1


    • Mechanical strain
    • Nanocrystalline silicon (nc-Si)
    • Semiconductor device measurements
    • Silicon
    • Stability
    • Thin-film transistors (TFTs)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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