Electroluminescence at Si bandgap energy from metal-oxide-semiconductor tunneling diodes

C. F. Lin*, M. J. Chen, M. H. Lee, C. Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The ultrathin gate oxide with thickness 1 ∼ 3 nm was grown by rapid thermal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of 10-5, which exceeds the limitation imposed byindirect bandgap nature of Si. We also study the temperature dependence of the electroluminescence and photoluminescence. The electroluminescence is much less dependent on temperature than photoluminescence from Si. The applied external field that results in the accumulation of majority carriers at Si/SiO2 interface in the case of electroluminescence could be the reason for such difference. The involved physics such as optical phonon, interface roughness, localized carriers, and exciton radiative recombination are used to explain the electroluminescence from silicon MOS tunneling diodes.

Original languageEnglish
Pages (from-to)147-154
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2001
Externally publishedYes
EventSilicon-based and Hybrid Optoelectronics III - San Jose, CA, United States
Duration: 2001 Jan 232001 Jan 24


  • Electroluminescence
  • MOS
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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