Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Ching Fuh Lin*, C. W. Liu, Miin Jang Chen, M. H. Lee, I. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

Original languageEnglish
Pages (from-to)8793-8795
Number of pages3
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2000 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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