Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Ching Fuh Lin; C. W. Liu; Miin Jang Chen; M. H. Lee; I. C. Lin

doi:10.1063/1.373612

Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Ching Fuh Lin^*, C. W. Liu, Miin Jang Chen, M. H. Lee, I. C. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm². The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

Original language	English
Pages (from-to)	8793-8795
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.373612
Publication status	Published - 2000 Jun 15
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Electroluminescence at si band gap energy based on metal-oxide-silicon structures",

abstract = "Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.",

author = "Lin, {Ching Fuh} and Liu, {C. W.} and Chen, {Miin Jang} and Lee, {M. H.} and Lin, {I. C.}",

year = "2000",

month = jun,

day = "15",

doi = "10.1063/1.373612",

language = "English",

volume = "87",

pages = "8793--8795",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

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TY - JOUR

T1 - Electroluminescence at si band gap energy based on metal-oxide-silicon structures

AU - Lin, Ching Fuh

AU - Liu, C. W.

AU - Chen, Miin Jang

AU - Lee, M. H.

AU - Lin, I. C.

PY - 2000/6/15

Y1 - 2000/6/15

N2 - Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

AB - Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

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DO - 10.1063/1.373612

M3 - Article

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SN - 0021-8979

VL - 87

SP - 8793

EP - 8795

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Abstract

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