Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Ching Fuh Lin, C. W. Liu, Miin Jang Chen, Min-Hung Lee, I. C. Lin

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

    Original languageEnglish
    Pages (from-to)8793-8795
    Number of pages3
    JournalJournal of Applied Physics
    Volume87
    Issue number12
    DOIs
    Publication statusPublished - 2000 Jun 15

    Fingerprint

    metal oxide semiconductors
    electroluminescence
    metal oxides
    momentum
    silicon
    radiative recombination
    light emitting diodes
    wave functions
    luminescence
    current density
    oxidation
    oxides
    causes
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Electroluminescence at si band gap energy based on metal-oxide-silicon structures. / Lin, Ching Fuh; Liu, C. W.; Chen, Miin Jang; Lee, Min-Hung; Lin, I. C.

    In: Journal of Applied Physics, Vol. 87, No. 12, 15.06.2000, p. 8793-8795.

    Research output: Contribution to journalArticle

    Lin, Ching Fuh ; Liu, C. W. ; Chen, Miin Jang ; Lee, Min-Hung ; Lin, I. C. / Electroluminescence at si band gap energy based on metal-oxide-silicon structures. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 12. pp. 8793-8795.
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    abstract = "Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.",
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    AU - Lee, Min-Hung

    AU - Lin, I. C.

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