Electroluminescence at si band gap energy based on metal-oxide-silicon structures

Ching Fuh Lin, C. W. Liu, Miin Jang Chen, M. H. Lee, I. C. Lin

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily.

Original languageEnglish
Pages (from-to)8793-8795
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number12
DOIs
Publication statusPublished - 2000 Jun 15

Fingerprint

metal oxide semiconductors
electroluminescence
metal oxides
momentum
silicon
radiative recombination
light emitting diodes
wave functions
luminescence
current density
oxidation
oxides
causes
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electroluminescence at si band gap energy based on metal-oxide-silicon structures. / Lin, Ching Fuh; Liu, C. W.; Chen, Miin Jang; Lee, M. H.; Lin, I. C.

In: Journal of Applied Physics, Vol. 87, No. 12, 15.06.2000, p. 8793-8795.

Research output: Contribution to journalArticle

Lin, Ching Fuh ; Liu, C. W. ; Chen, Miin Jang ; Lee, M. H. ; Lin, I. C. / Electroluminescence at si band gap energy based on metal-oxide-silicon structures. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 12. pp. 8793-8795.
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