Electrodeless wet etching of GaN assisted with chopped ultraviolet light

Z. H. Hwang, J. M. Hwang, H. L. Hwang, Wei-Hsiu Hung

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The electrodeless photoelectrochemical (PEC) wet etching of GaN, photoassisted with chopped ultraviolet light, was investigated. The scanning electron microscopy was used to study the etched surfaces of GaN. It was observed that the rate of recombination of electrons and holes at a dislocation defect was greater than for crystalline GaN, resulting in a rough etched surface with pyramids. A shorter period of chopped UV irradiation was observed to offer a smoother etched surface via a decrease of the carrier recombination in dislocation.

Original languageEnglish
Pages (from-to)3759-3761
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

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ultraviolet radiation
etching
pyramids
scanning electron microscopy
irradiation
defects
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrodeless wet etching of GaN assisted with chopped ultraviolet light. / Hwang, Z. H.; Hwang, J. M.; Hwang, H. L.; Hung, Wei-Hsiu.

In: Applied Physics Letters, Vol. 84, No. 19, 10.05.2004, p. 3759-3761.

Research output: Contribution to journalArticle

Hwang, Z. H. ; Hwang, J. M. ; Hwang, H. L. ; Hung, Wei-Hsiu. / Electrodeless wet etching of GaN assisted with chopped ultraviolet light. In: Applied Physics Letters. 2004 ; Vol. 84, No. 19. pp. 3759-3761.
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