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Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures
J. R. Lee
,
C. R. Lu
,
H. L. Liu
, H. H. Lin
, L. W. Sun
Department of Physics
Research output
:
Contribution to journal
›
Conference article
›
peer-review
Overview
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INIS
modulation
100%
gallium arsenides
100%
quantum states
100%
quantum wells
100%
wave functions
100%
barriers
66%
strains
66%
comparative evaluations
33%
layers
33%
efficiency
33%
interfaces
33%
thickness
33%
spectroscopy
33%
states (energy)
33%
space charge
33%
electric fields
33%
buffers
33%
confinement
33%
mbe
33%
energy-level transitions
33%
Engineering
Gallium Arsenide
100%
Quantum State
100%
Quantum Well
100%
Space Charge Region
33%
Modulation Efficiency
33%
Internal Electric Field
33%
Photoreflectance
33%
Spectral Feature
33%
Buffer Layer
33%