Electrical transport and carrier density collapse in doped manganite thin films

L. M. Wang, Hong-Chang Yang, Herng-Er Horng

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number22
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Carrier concentration
Thin films
electrical resistivity
thin films
Oxides
Manganites
Temperature
oxides
deduction
Epitaxial films
Magnetoresistance
Temperature distribution
temperature distribution
Magnetic fields
temperature
manganite
magnetic fields

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical transport and carrier density collapse in doped manganite thin films. / Wang, L. M.; Yang, Hong-Chang; Horng, Herng-Er.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 22, 01.01.2001.

Research output: Contribution to journalArticle

@article{50b501c75774493299bda693e8f819cf,
title = "Electrical transport and carrier density collapse in doped manganite thin films",
abstract = "Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.",
author = "Wang, {L. M.} and Hong-Chang Yang and Herng-Er Horng",
year = "2001",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.64.224423",
language = "English",
volume = "64",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "22",

}

TY - JOUR

T1 - Electrical transport and carrier density collapse in doped manganite thin films

AU - Wang, L. M.

AU - Yang, Hong-Chang

AU - Horng, Herng-Er

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

AB - Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

UR - http://www.scopus.com/inward/record.url?scp=0035587064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035587064&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.64.224423

DO - 10.1103/PhysRevB.64.224423

M3 - Article

VL - 64

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 22

ER -