Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2001 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics