Electrical transport and carrier density collapse in doped manganite thin films

L. M. Wang, H. C. Yang, H. E. Horng

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

    Original languageEnglish
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume64
    Issue number22
    DOIs
    Publication statusPublished - 2001 Jan 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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