Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

Min-Hung Lee, B. F. Hsieh, S. T. Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The formation of trapped states due to mechanical strain dominates the characteristics of a-Si:H thin-film transistors. The behavior of electrical characteristics affected by mechanical strain can be explained by the redistribution of trap states in the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics, such as threshold voltage, subthreshold swing, and the mobility of carriers. During a mechanical strain, the deep states are redistributed into a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which have exponential distributions. It is concluded that the gap state density of an a-Si:H layer under the effects of mechanical strain is fundamental to the reliability and development of flexible electronics.

Original languageEnglish
Pages (from-to)82-85
Number of pages4
JournalThin Solid Films
Volume528
DOIs
Publication statusPublished - 2013 Jan 15

Fingerprint

Thin film transistors
Electric properties
transistors
electrical properties
Substrates
thin films
traps
Flexible electronics
normal density functions
threshold voltage
Gaussian distribution
Threshold voltage
Energy gap
electronics

Keywords

  • Deep states
  • Flexible electronics
  • Mechanical strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending. / Lee, Min-Hung; Hsieh, B. F.; Chang, S. T.

In: Thin Solid Films, Vol. 528, 15.01.2013, p. 82-85.

Research output: Contribution to journalArticle

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