Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

M. H. Lee, B. F. Hsieh, S. T. Chang

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    The formation of trapped states due to mechanical strain dominates the characteristics of a-Si:H thin-film transistors. The behavior of electrical characteristics affected by mechanical strain can be explained by the redistribution of trap states in the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics, such as threshold voltage, subthreshold swing, and the mobility of carriers. During a mechanical strain, the deep states are redistributed into a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which have exponential distributions. It is concluded that the gap state density of an a-Si:H layer under the effects of mechanical strain is fundamental to the reliability and development of flexible electronics.

    Original languageEnglish
    Pages (from-to)82-85
    Number of pages4
    JournalThin Solid Films
    Volume528
    DOIs
    Publication statusPublished - 2013 Jan 15

    Keywords

    • Deep states
    • Flexible electronics
    • Mechanical strain

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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