Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

M. H. Lee, B. F. Hsieh, S. T. Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)


The formation of trapped states due to mechanical strain dominates the characteristics of a-Si:H thin-film transistors. The behavior of electrical characteristics affected by mechanical strain can be explained by the redistribution of trap states in the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics, such as threshold voltage, subthreshold swing, and the mobility of carriers. During a mechanical strain, the deep states are redistributed into a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which have exponential distributions. It is concluded that the gap state density of an a-Si:H layer under the effects of mechanical strain is fundamental to the reliability and development of flexible electronics.

Original languageEnglish
Pages (from-to)82-85
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2013 Jan 15



  • Deep states
  • Flexible electronics
  • Mechanical strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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