Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang, Ssu Hao Peng, You Ming Hu, Shuang Yuan Chen, Heng Sheng Huang, Mu Chun Wang*, Hsin Chia Yang, Chuan Hsi Liu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)


The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

Original languageEnglish
Number of pages4
Publication statusPublished - 2013
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26


Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013


  • amorphous-silicon
  • LTPS
  • mobility
  • poly-Silicon
  • thin-film transistors
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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