Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang; Ssu Hao Peng; You Ming Hu; Shuang Yuan Chen; Heng Sheng Huang; Mu Chun Wang; Hsin Chia Yang; Chuan Hsi Liu

doi:10.1109/ISNE.2013.6512353

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang, Ssu Hao Peng, You Ming Hu, Shuang Yuan Chen, Heng Sheng Huang, Mu Chun Wang^*, Hsin Chia Yang, Chuan Hsi Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to conference › Paper › peer-review

4 Citations (Scopus)

Abstract

The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm²/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V _th), ON/OFF ratio, field effect mobility (μ_FE), interface state density (N_it) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

Original language	English
Pages	309-312
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512353
Publication status	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	2013/02/25 → 2013/02/26

Keywords

LTPS
amorphous-silicon
mobility
poly-Silicon
thin-film transistors
threshold voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISNE.2013.6512353

Cite this

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title = "Electrical performance of a-Si:H and poly-Si TFTs with heating stress",

abstract = "The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.",

keywords = "LTPS, amorphous-silicon, mobility, poly-Silicon, thin-film transistors, threshold voltage",

author = "Wang, {Shea Jue} and Peng, {Ssu Hao} and Hu, {You Ming} and Chen, {Shuang Yuan} and Huang, {Heng Sheng} and Wang, {Mu Chun} and Yang, {Hsin Chia} and Liu, {Chuan Hsi}",

year = "2013",

doi = "10.1109/ISNE.2013.6512353",

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T1 - Electrical performance of a-Si:H and poly-Si TFTs with heating stress

AU - Wang, Shea Jue

AU - Peng, Ssu Hao

AU - Hu, You Ming

AU - Chen, Shuang Yuan

AU - Huang, Heng Sheng

AU - Wang, Mu Chun

AU - Yang, Hsin Chia

AU - Liu, Chuan Hsi

PY - 2013

Y1 - 2013

N2 - The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

AB - The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

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KW - poly-Silicon

KW - thin-film transistors

KW - threshold voltage

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ER -

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

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Keywords

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