Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang, Ssu Hao Peng, You Ming Hu, Shuang Yuan Chen, Heng Sheng Huang, Mu Chun Wang, Hsin Chia Yang, Chuan Hsi Liu

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

Original languageEnglish
Pages309-312
Number of pages4
DOIs
Publication statusPublished - 2013 May 27
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13/2/2513/2/26

Fingerprint

Polysilicon
Heating
Crystallization
Flat panel displays
Continuous wave lasers
Interface states
Amorphous silicon
Liquid crystal displays
Threshold voltage
Thermal effects
Temperature
Furnaces
Degradation
Glass
Lasers

Keywords

  • LTPS
  • amorphous-silicon
  • mobility
  • poly-Silicon
  • thin-film transistors
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., ... Liu, C. H. (2013). Electrical performance of a-Si:H and poly-Si TFTs with heating stress. 309-312. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512353

Electrical performance of a-Si:H and poly-Si TFTs with heating stress. / Wang, Shea Jue; Peng, Ssu Hao; Hu, You Ming; Chen, Shuang Yuan; Huang, Heng Sheng; Wang, Mu Chun; Yang, Hsin Chia; Liu, Chuan Hsi.

2013. 309-312 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conferencePaper

Wang, SJ, Peng, SH, Hu, YM, Chen, SY, Huang, HS, Wang, MC, Yang, HC & Liu, CH 2013, 'Electrical performance of a-Si:H and poly-Si TFTs with heating stress', Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 13/2/25 - 13/2/26 pp. 309-312. https://doi.org/10.1109/ISNE.2013.6512353
Wang SJ, Peng SH, Hu YM, Chen SY, Huang HS, Wang MC et al. Electrical performance of a-Si:H and poly-Si TFTs with heating stress. 2013. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512353
Wang, Shea Jue ; Peng, Ssu Hao ; Hu, You Ming ; Chen, Shuang Yuan ; Huang, Heng Sheng ; Wang, Mu Chun ; Yang, Hsin Chia ; Liu, Chuan Hsi. / Electrical performance of a-Si:H and poly-Si TFTs with heating stress. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.4 p.
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