Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang, Ssu Hao Peng, You Ming Hu, Shuang Yuan Chen, Heng Sheng Huang, Mu Chun Wang, Hsin Chia Yang, Chuan-Hsi Liu

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

Original languageEnglish
Pages309-312
Number of pages4
DOIs
Publication statusPublished - 2013 May 27
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13/2/2513/2/26

Fingerprint

Polysilicon
Heating
Crystallization
Flat panel displays
Continuous wave lasers
Interface states
Amorphous silicon
Liquid crystal displays
Threshold voltage
Thermal effects
Temperature
Furnaces
Degradation
Glass
Lasers

Keywords

  • amorphous-silicon
  • LTPS
  • mobility
  • poly-Silicon
  • thin-film transistors
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., ... Liu, C-H. (2013). Electrical performance of a-Si:H and poly-Si TFTs with heating stress. 309-312. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512353

Electrical performance of a-Si:H and poly-Si TFTs with heating stress. / Wang, Shea Jue; Peng, Ssu Hao; Hu, You Ming; Chen, Shuang Yuan; Huang, Heng Sheng; Wang, Mu Chun; Yang, Hsin Chia; Liu, Chuan-Hsi.

2013. 309-312 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conferencePaper

Wang, SJ, Peng, SH, Hu, YM, Chen, SY, Huang, HS, Wang, MC, Yang, HC & Liu, C-H 2013, 'Electrical performance of a-Si:H and poly-Si TFTs with heating stress' Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 13/2/25 - 13/2/26, pp. 309-312. https://doi.org/10.1109/ISNE.2013.6512353
Wang SJ, Peng SH, Hu YM, Chen SY, Huang HS, Wang MC et al. Electrical performance of a-Si:H and poly-Si TFTs with heating stress. 2013. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512353
Wang, Shea Jue ; Peng, Ssu Hao ; Hu, You Ming ; Chen, Shuang Yuan ; Huang, Heng Sheng ; Wang, Mu Chun ; Yang, Hsin Chia ; Liu, Chuan-Hsi. / Electrical performance of a-Si:H and poly-Si TFTs with heating stress. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.4 p.
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