Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Y. C. Chiu, Z. W. Zheng, C. H. Cheng*, P. C. Chen, S. S. Yen, C. C. Fan, H. H. Hsu, H. L. Kao, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Original languageEnglish
Article number188
JournalApplied Physics A: Materials Science and Processing
Volume123
Issue number3
DOIs
Publication statusPublished - 2017 Mar

Keywords

  • HfO2
  • High Energy Photon
  • Illumination Environment
  • Light Illumination
  • Passivation Layer

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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