Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Y. C. Chiu, Z. W. Zheng, C. H. Cheng, P. C. Chen, S. S. Yen, C. C. Fan, H. H. Hsu, H. L. Kao, C. Y. Chang

Research output: Contribution to journalArticle

Abstract

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Original languageEnglish
Article number188
JournalApplied Physics A: Materials Science and Processing
Volume123
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Thin film transistors
Titanium
Oxides
Lighting
Passivation
Zinc Oxide
Gallium
Indium
Oxygen vacancies
Zinc oxide
Oxide films
Photons
Display devices
Degradation
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination. / Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

In: Applied Physics A: Materials Science and Processing, Vol. 123, No. 3, 188, 01.03.2017.

Research output: Contribution to journalArticle

Chiu, Y. C. ; Zheng, Z. W. ; Cheng, C. H. ; Chen, P. C. ; Yen, S. S. ; Fan, C. C. ; Hsu, H. H. ; Kao, H. L. ; Chang, C. Y. / Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination. In: Applied Physics A: Materials Science and Processing. 2017 ; Vol. 123, No. 3.
@article{b9a6f3462e4e4d72aad22ca448f572c9,
title = "Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination",
abstract = "The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.",
author = "Chiu, {Y. C.} and Zheng, {Z. W.} and Cheng, {C. H.} and Chen, {P. C.} and Yen, {S. S.} and Fan, {C. C.} and Hsu, {H. H.} and Kao, {H. L.} and Chang, {C. Y.}",
year = "2017",
month = "3",
day = "1",
doi = "10.1007/s00339-017-0831-7``",
language = "English",
volume = "123",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "3",

}

TY - JOUR

T1 - Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

AU - Chiu, Y. C.

AU - Zheng, Z. W.

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Yen, S. S.

AU - Fan, C. C.

AU - Hsu, H. H.

AU - Kao, H. L.

AU - Chang, C. Y.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

AB - The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

UR - http://www.scopus.com/inward/record.url?scp=85013877323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013877323&partnerID=8YFLogxK

U2 - 10.1007/s00339-017-0831-7``

DO - 10.1007/s00339-017-0831-7``

M3 - Article

AN - SCOPUS:85013877323

VL - 123

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 3

M1 - 188

ER -