Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Chuan Hsi Liu; Fu Chien Chiu

doi:10.1109/LED.2006.887626

Electrical characterization of ZrO₂/Si interface properties in MOSFETs with ZrO₂ gate dielectrics

Chuan Hsi Liu^*, Fu Chien Chiu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

MOSFETs incorporating ZrO₂ gate dielectrics were fabricated. The I_DS-V_DS,I_DS-V_GS, and gated diode characteristics were analyzed to investigate the ZrO₂ interface properties. The interface trap density (D_it) was determined to be about 7.4 × 10¹² cm^-2 · eV^-1 using subthreshold swing measurement. The surface-recombination velocity (S_O)and the minority carrier lifetime in the field-induced depletion region (τ_0,FIJ measured from the gated diodes were about 3.5 × 10³ cm/s and 2.6 × 10⁶ s respectively. The effective capture cross section of surface state (σ_s) was determined to be about 5.8 × 10^-16 cm² using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO₂ gate oxides was also made.

Original language	English
Pages (from-to)	62-64
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LED.2006.887626
Publication status	Published - 2007 Jan
Externally published	Yes

Keywords

Gated diode
High-κ dielectrics
ZrO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.887626

Cite this

@article{220f6c7d3f444024a0151357e8761927,

title = "Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics",

abstract = "MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.",

keywords = "Gated diode, High-κ dielectrics, ZrO",

author = "Liu, {Chuan Hsi} and Chiu, {Fu Chien}",

note = "Funding Information: Manuscript received August 1, 2006. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC 95-2218-E-130-001 and in part by the Technology Development Program of Academia (TDPA) Department of Industrial Technology (DOIT) Ministry of Economic Affairs (MOEA) under Contract 95-EC-17-A-01-S1-047. The review of this letter was arranged by Editor A. Chatterjee.",

year = "2007",

month = jan,

doi = "10.1109/LED.2006.887626",

language = "English",

volume = "28",

pages = "62--64",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

AU - Liu, Chuan Hsi

AU - Chiu, Fu Chien

N1 - Funding Information: Manuscript received August 1, 2006. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC 95-2218-E-130-001 and in part by the Technology Development Program of Academia (TDPA) Department of Industrial Technology (DOIT) Ministry of Economic Affairs (MOEA) under Contract 95-EC-17-A-01-S1-047. The review of this letter was arranged by Editor A. Chatterjee.

PY - 2007/1

Y1 - 2007/1

N2 - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

AB - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

KW - Gated diode

KW - High-κ dielectrics

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=33845988058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845988058&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.887626

DO - 10.1109/LED.2006.887626

M3 - Article

AN - SCOPUS:33845988058

SN - 0741-3106

VL - 28

SP - 62

EP - 64

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -