MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.
- Gated diode
- High-κ dielectrics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering