Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Chuan Hsi Liu, Fu Chien Chiu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Gate dielectrics
Diodes
Carrier lifetime
Surface states
Oxides

Keywords

  • Gated diode
  • High-κ dielectrics
  • ZrO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics. / Liu, Chuan Hsi; Chiu, Fu Chien.

In: IEEE Electron Device Letters, Vol. 28, No. 1, 01.01.2007, p. 62-64.

Research output: Contribution to journalArticle

@article{c6d0066365b64d1e8090e89471ce8931,
title = "Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics",
abstract = "MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.",
keywords = "Gated diode, High-κ dielectrics, ZrO",
author = "Liu, {Chuan Hsi} and Chiu, {Fu Chien}",
year = "2007",
month = "1",
day = "1",
doi = "10.1109/LED.2006.887626",
language = "English",
volume = "28",
pages = "62--64",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

AU - Liu, Chuan Hsi

AU - Chiu, Fu Chien

PY - 2007/1/1

Y1 - 2007/1/1

N2 - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

AB - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

KW - Gated diode

KW - High-κ dielectrics

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=33845988058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845988058&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.887626

DO - 10.1109/LED.2006.887626

M3 - Article

AN - SCOPUS:33845988058

VL - 28

SP - 62

EP - 64

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -