Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Chuan Hsi Liu, Fu Chien Chiu

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2007 Jan


  • Gated diode
  • High-κ dielectrics
  • ZrO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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