INIS
deposition
100%
layers
100%
oxides
100%
stacks
100%
metals
100%
dielectrics
100%
carriers
100%
semiconductor materials
100%
field effect transistors
100%
hafnium silicates
100%
emission
60%
interfaces
60%
annealing
40%
injection
40%
leakage current
40%
traps
40%
electric fields
40%
height
20%
units
20%
capture
20%
films
20%
energy
20%
density
20%
barriers
20%
charges
20%
temperature dependence
20%
substrates
20%
pumping
20%
high temperature
20%
nitridation
20%
low temperature
20%
leakage
20%
thickness
20%
ammonia
20%
electrical properties
20%
capacitors
20%
thin films
20%
cross sections
20%
Material Science
Hafnium
100%
Dielectric Material
100%
Silicate
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Characterization
100%
Temperature
80%
Nitriding
20%
Oxide
20%
Film
20%
Density
20%
Electrical Property
20%
Capacitor
20%
Thin Films
20%
Metal Oxide
20%
Oxide Semiconductor
20%