Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

H. W. Chen, S. Y. Chen, K. C. Chen, H. S. Huang, Chuan-Hsi Liu, F. C. Chiu, K. W. Liu, K. C. Lin, L. W. Cheng, C. T. Lin, G. H. Ma, S. W. Sun

Research output: Contribution to journalArticle

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Abstract

Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH 3 ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10 10 cm -2 , 2.7 × 10 11 cm -2 eV -1 and 6.4 × 10 -15 cm -2 using charge pumping method.

Original languageEnglish
Pages (from-to)6127-6130
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Fingerprint

Hafnium
Silicates
Atomic layer deposition
MOSFET devices
Leakage currents
Annealing
Temperature
Nitridation
Polysilicon
Oxides
Electric properties
Capacitors
Metals
Thin films
Substrates

Keywords

  • Carrier transportation
  • HfSiON
  • High-κ
  • Interface traps

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs. / Chen, H. W.; Chen, S. Y.; Chen, K. C.; Huang, H. S.; Liu, Chuan-Hsi; Chiu, F. C.; Liu, K. W.; Lin, K. C.; Cheng, L. W.; Lin, C. T.; Ma, G. H.; Sun, S. W.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6127-6130.

Research output: Contribution to journalArticle

Chen, HW, Chen, SY, Chen, KC, Huang, HS, Liu, C-H, Chiu, FC, Liu, KW, Lin, KC, Cheng, LW, Lin, CT, Ma, GH & Sun, SW 2008, 'Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs', Applied Surface Science, vol. 254, no. 19, pp. 6127-6130. https://doi.org/10.1016/j.apsusc.2008.02.196
Chen, H. W. ; Chen, S. Y. ; Chen, K. C. ; Huang, H. S. ; Liu, Chuan-Hsi ; Chiu, F. C. ; Liu, K. W. ; Lin, K. C. ; Cheng, L. W. ; Lin, C. T. ; Ma, G. H. ; Sun, S. W. / Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs. In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6127-6130.
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AU - Chen, K. C.

AU - Huang, H. S.

AU - Liu, Chuan-Hsi

AU - Chiu, F. C.

AU - Liu, K. W.

AU - Lin, K. C.

AU - Cheng, L. W.

AU - Lin, C. T.

AU - Ma, G. H.

AU - Sun, S. W.

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N2 - Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH 3 ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10 10 cm -2 , 2.7 × 10 11 cm -2 eV -1 and 6.4 × 10 -15 cm -2 using charge pumping method.

AB - Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH 3 ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10 10 cm -2 , 2.7 × 10 11 cm -2 eV -1 and 6.4 × 10 -15 cm -2 using charge pumping method.

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KW - High-κ

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