Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

Yi Wei Fang; Zih Jing Yang; Ruo Yin Liao; Pei Tien Chen; Cun Bo Liu; Kai Yang Huang; Hsiao Hsuan Hsu; Chun Hu Cheng; Wu Ching Chou; Shih Hao Lin; Ye Zhou

doi:10.1016/j.tsf.2022.139395

Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

Yi Wei Fang, Zih Jing Yang, Ruo Yin Liao, Pei Tien Chen, Cun Bo Liu, Kai Yang Huang, Hsiao Hsuan Hsu^*, Chun Hu Cheng, Wu Ching Chou, Shih Hao Lin, Ye Zhou

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, we investigate ferroelectric characteristics of hafnium zirconium oxide (HfZrO) metal-ferroelectric-metal (MFM) devices with mixed and stacked film structure. The experimental results reveal that the stacked HfZrO MFM device has a lower dynamic leakage and stronger ferroelectric polarization value of approximately 27.3 μC/cm², which is much higher than 17.5 μC/cm² measured from mixed HfZrO MFM device. From endurance cycling test, we also confirm that the stacked HfZrO MFM capacitor with a remote nitrogen plasma treatment featuring a large initial hysteresis window can achieve a stable operation up to 10⁸ cycles at an operating voltage of 2.5 V, which is even longer than that of mixed HfZrO MFM capacitor by one order of magnitude. Therefore, the stacked MFM structure with proper interface engineering provides a promising approach for the process integration of ferroelectric memory under the comprehensive consideration of device performance and endurance.

Original language	English
Article number	139395
Journal	Thin Solid Films
Volume	757
DOIs	https://doi.org/10.1016/j.tsf.2022.139395
Publication status	Published - 2022 Sept 1

Keywords

Endurance
Ferroelectric
Hafnium zirconium oxide
Nitrogen plasma

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides",

abstract = "In this work, we investigate ferroelectric characteristics of hafnium zirconium oxide (HfZrO) metal-ferroelectric-metal (MFM) devices with mixed and stacked film structure. The experimental results reveal that the stacked HfZrO MFM device has a lower dynamic leakage and stronger ferroelectric polarization value of approximately 27.3 μC/cm2, which is much higher than 17.5 μC/cm2 measured from mixed HfZrO MFM device. From endurance cycling test, we also confirm that the stacked HfZrO MFM capacitor with a remote nitrogen plasma treatment featuring a large initial hysteresis window can achieve a stable operation up to 108 cycles at an operating voltage of 2.5 V, which is even longer than that of mixed HfZrO MFM capacitor by one order of magnitude. Therefore, the stacked MFM structure with proper interface engineering provides a promising approach for the process integration of ferroelectric memory under the comprehensive consideration of device performance and endurance.",

keywords = "Endurance, Ferroelectric, Hafnium zirconium oxide, Nitrogen plasma",

author = "Fang, {Yi Wei} and Yang, {Zih Jing} and Liao, {Ruo Yin} and Chen, {Pei Tien} and Liu, {Cun Bo} and Huang, {Kai Yang} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Chou, {Wu Ching} and Lin, {Shih Hao} and Ye Zhou",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2022.139395",

language = "English",

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T1 - Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

AU - Fang, Yi Wei

AU - Yang, Zih Jing

AU - Liao, Ruo Yin

AU - Chen, Pei Tien

AU - Liu, Cun Bo

AU - Huang, Kai Yang

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chou, Wu Ching

AU - Lin, Shih Hao

AU - Zhou, Ye

PY - 2022/9/1

Y1 - 2022/9/1

N2 - In this work, we investigate ferroelectric characteristics of hafnium zirconium oxide (HfZrO) metal-ferroelectric-metal (MFM) devices with mixed and stacked film structure. The experimental results reveal that the stacked HfZrO MFM device has a lower dynamic leakage and stronger ferroelectric polarization value of approximately 27.3 μC/cm2, which is much higher than 17.5 μC/cm2 measured from mixed HfZrO MFM device. From endurance cycling test, we also confirm that the stacked HfZrO MFM capacitor with a remote nitrogen plasma treatment featuring a large initial hysteresis window can achieve a stable operation up to 108 cycles at an operating voltage of 2.5 V, which is even longer than that of mixed HfZrO MFM capacitor by one order of magnitude. Therefore, the stacked MFM structure with proper interface engineering provides a promising approach for the process integration of ferroelectric memory under the comprehensive consideration of device performance and endurance.

AB - In this work, we investigate ferroelectric characteristics of hafnium zirconium oxide (HfZrO) metal-ferroelectric-metal (MFM) devices with mixed and stacked film structure. The experimental results reveal that the stacked HfZrO MFM device has a lower dynamic leakage and stronger ferroelectric polarization value of approximately 27.3 μC/cm2, which is much higher than 17.5 μC/cm2 measured from mixed HfZrO MFM device. From endurance cycling test, we also confirm that the stacked HfZrO MFM capacitor with a remote nitrogen plasma treatment featuring a large initial hysteresis window can achieve a stable operation up to 108 cycles at an operating voltage of 2.5 V, which is even longer than that of mixed HfZrO MFM capacitor by one order of magnitude. Therefore, the stacked MFM structure with proper interface engineering provides a promising approach for the process integration of ferroelectric memory under the comprehensive consideration of device performance and endurance.

KW - Endurance

KW - Ferroelectric

KW - Hafnium zirconium oxide

KW - Nitrogen plasma

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Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

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Keywords

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