INIS
reliability
100%
oxides
100%
metals
100%
dielectrics
100%
capacitors
100%
semiconductor materials
100%
breakdown
60%
time dependence
60%
lifetime
40%
deposition
20%
layers
20%
voltage
20%
acceleration
20%
thickness
20%
current density
20%
leakage current
20%
activation energy
20%
Material Science
Electrical Property
100%
Dielectric Material
100%
Capacitor
100%
Metal Oxide
100%
Oxide Semiconductor
100%
Electrical Breakdown
100%
Oxide
33%
Density
33%
Percolation
33%
Activation Energy
33%
Engineering
Reliability
100%
Gate Dielectric
100%
Dielectrics
100%
Models
66%
Density
33%
Electric Potential
33%
Experimental Result
33%
Atomic Layer Deposition
33%
Fields
33%
Oxide Thickness
33%
Activation Energy
33%
Stress Condition
33%
Physics
Dielectrics
100%
Capacitor
100%
Time Dependence
100%
Model
66%
Area
33%
Behavior
33%
Oxide
33%
Parameter
33%
Electric Potential
33%
Atomic Layer Epitaxy
33%
Percolation
33%