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Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics
C. H. Liu
*
, H. W. Chen
*
Corresponding author for this work
Department of Mechatronic Engineering
Research output
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Article
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peer-review
2
Citations (Scopus)
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Engineering & Materials Science
Gate dielectrics
100%
Oxide semiconductors
83%
Electric breakdown
79%
Capacitors
55%
Metals
45%
Atomic layer deposition
35%
Leakage currents
25%
Activation energy
24%
Current density
22%
Oxides
20%
Electric potential
12%
Physics & Astronomy
metal oxide semiconductors
72%
capacitors
61%
time dependence
50%
breakdown
40%
life (durability)
23%
atomic layer epitaxy
18%
leakage
14%
projection
14%
slopes
13%
activation energy
12%
current density
12%
oxides
10%
electric potential
9%
Chemical Compounds
Capacitor
72%
Dielectric Material
61%
Leakage Current
23%
Atomic Layer Epitaxy
20%
Current Density
12%
Voltage
12%
Reaction Activation Energy
12%
Oxide
9%